AddressROLE: Engineering Manager – MOCVD/Epitaxy/GaN
LOCATION: Cambridge, UK
SALARY: £50,000 - £65,000K
DURATION: Permanent
Please note: No Sponsorship
My client is providing state-of-art process technologies and device solutions to unleash the full potential of GaN to revolutionise the electronics industry. Our products have enormous applications in microLED, energy efficient lighting and power management, as well as lasers, quantum light sources, sensors, and energy generation.
• Master's degree in Materials, Physics, a related field, or equivalent practical experience with good background knowledge on GaN materials and LED devices
• Hands on experience in MOCVD growth of nitrides are essential, experience in GaN-on-Si epitaxy is a plus
• Good project management and communication skills are required, as this role will be leading technology development with GaN epitaxy suppliers and partners
• Experience of product development in semiconductor devices
• Excellent data analysis skills, working with large data sets and physics-based modelling experience
• An ideal candidate would have background in MOCVD growth of GaN LED structures, who has then worked as an integration engineer or project manager in industry.
Please get in touch. See my details below:
Christina@microtech-global.com
